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FKN08PN60 TRIAC (Silicon Bidirectional Thyristor)
August 2006
FKN08PN60
TRIAC (Silicon Bidirectional Thyristor)
Application Explanation
* * * * Switching mode power supply, light dimmer, electric flasher unit, hair drier TV sets, stereo, refrigerator, washing machine Electric blanket, solenoid driver, small motor control Photo copier, electric tool
tm
3 1: T1 2: Gate 3: T2
2
TO-92
123
1
Absolute Maximum Ratings
Symbol
VDRM VRRM IT (RMS) ITSM
Ta = 25C unless otherwise noted
Parameter
Peak Repetitive Off-State Voltage RMS On-State Current Surge On-State Current
Value
Sine Wave 50 to 60Hz, Gate Open Commercial frequency, sine full wave 360 conduction, Tc= 70 Sinewave 1 full cycle, peak value, non-repetitive 50Hz 60Hz
Rating
600 0.8 8 9 0.33 5 0.1 5 1 - 40 ~ 125 - 40 ~ 125
Units
V A A A A 2s W W V A C C
I2 t PGM PG (AV) VGM IGM TJ TSTG
I2t
for Fusing
Value corresponding to 1 cycle of halfwave, surge on-state current, tp=8.4ms
Peak Gate Power Dissipation Average Gate Power Dissipation Peak Gate Voltage Peak Gate Current Junction Temperature Storage Temperature
Thermal Characteristics
Symbol
RJC RJA
Parameter
Thermal Resistance, Junction to Case
(note1) (note2)
Value
40 160
Units
C/W C/W
Thermal Resistance, Junction to Ambient
Note1: Infinite cooling condition. Note2: JESD51-10 ( Test Borad: FR4 3.0"*4.5"*0.062", Minimum land pad)
(c)2006 Fairchild Semiconductor Corporation
1
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FKN08PN60 Rev. A
FKN08PN60 TRIAC (Silicon Bidirectional Thyristor)
Electrical Characteristics
Symbol
IDRM IRRM VTM
TC = 25C unless otherwise noted
Parameter
Repetieive Peak Off-State Current On-State Voltage I
Test Condition
VDRM/VRRM applied TC=25C, ITM=1.12A Instantaneous measurement T2(+), Gate (+) VD=12V, RL=100 T2(+), Gate (-) T2(-), Gate (-) T2(+), Gate (+) VD=12V, RL=100 TJ=125C, VD=1/2VDRM (I, II,III) I, III II VD = 12V, ITM = 200mA VD = 12V, IG = 10mA VDRM = 63% Rated, Tj = 125C, Exponential Rise T2(+), Gate (-) T2(-), Gate (-) II III I
Min.
Typ.
Max.
Units
0.2 20 3.0
-
100 1.8 2.0 2.0 2.0 5 5 5 15 15 20 -
A V V V V mA mA mA V mA mA mA V/s V/s
VGT
Gate Trigger Voltage
IGT VGD IH IL dv/dt(s) dv/dt(c)
Gate Trigger Current Gate Non-Trigger Voltage Holding Current Latching Current Critical Rate of Rise of Off-State Voltag
II III
Critical-Rate of Rise of Off-State Commutating Voltage (di/dt=-0.7A/uS)
Commutation dv/dt test
VDRM (V)
FKN08PN60
Test Condition
1. Junction Temperature TJ=125C 2. Rate of decay of on-state commutating current (di/dt)C 3. Peak off-state voltage VD = 300V
Commutating voltage and current waveforms (inductive load)
Supply Voltage (di/dt)C Main Current Time
Time
Main Voltage (dv/dt)C
Time VD
2 FKN08PN60 Rev. A
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FKN08PN60 TRIAC (Silicon Bidirectional Thyristor)
Quadrant Definitions for a Triac
T2 Positive + (+) T2 (+) T2
Quadrant II
(-) IGT GATE T1
(+) IGT GATE T1
Quadrant I
IGT (-) T2 (-) T2
+ IGT
Quadrant III
(-) IGT GATE T1
(+) IGT GATE T1
Quadrant IV
T2 Negative
Package Marking and Ordering Information
Device Marking
K08PN60
Device
FKN08PN60
Package
TO-92
Packing
Bulk
Tape Width
--
Quantity
--
3 FKN08PN60 Rev. A
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FKN08PN60 TRIAC (Silicon Bidirectional Thyristor)
Typical Performance Characteristics
Figure 1. On-State Characteristics Figure 2. Power Dissipation
PAV[W], Maximum Average Power Dissipation
1.2
ITM[A], On-State Current
1.0
DC
0.8
o
TJ=125 C
1
o
TJ=25 C
o
180 C 120 C
o
0.6
90 C
0.4
o
60 C
0.2
o
30 C
o
0.1 0.0
0.5
1.0
1.5
2.0
2.5
0.0 0.0
0.2
0.4
0.6
0.8
1.0
VTM[V], On-State Voltage
ITRMS[A], On-State Current
Figure 3. RMS Current Rating
Figure 4. Typical Gate Trigger Current vs Junction Temperature
6
Maximum Allowable Case Temperature, TC[ C]
o
120
IGT[mA], Gate Trigger Current
30 C 60 C
o
o
5
110
90 C
o
o
4
100
Q3
3
120 C 180 C
o
Q2
2
90
DC
80
Q1
1
70 0.0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1.0
0 -40
0
o
40
80
120
ITRMS[A], On-State Current
TJ[ C], Junction Temperature
Figure5. Typical Gate Voltage vs Junction Temperarure
1.0
Figure6. Typical Latching Currrent vs Junction Temperature
6
VGT[mA], Gate Trigger Voltage
0.9
0.8
VGT[mA], Gate Trigger Voltage
4
Q3
0.7
Q3 Q1
0.6
2
Q2
0.5
Q1
0.4 -40
0
o
40
80
120
0 -40
0
o
40
80
120
TJ[ C], Junction Temperature
TJ[ C], Junction Temperature
4 FKN08PN60 Rev. A
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FKN08PN60 TRIAC (Silicon Bidirectional Thyristor)
Typical Performance Characteristics (Continued)
Figure7. Typical Holding Current vs Junction Temperature
5
Figure8. Junction to Case Thermal Resistance
Junction to Case Thermal Resistance, [ C/W]
50
IH[mA],Holding Current
4
o
40
3
30
Q3
2
20
Q1
1
Q2
10
0 -40
0
o
40
80
120
0 1E-6
1E-5
1E-4
1E-3
0.01
0.1
1
10
100
TJ[ C], Junction Temperature
Time, [S]
5 FKN08PN60 Rev. A
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FKN08PN60 TRIAC (Silicon Bidirectional Thyristor)
Package Dimension
TO-92
4.58 -0.15
+0.25
0.46
14.47 0.40
0.10
4.58 0.20
1.27TYP [1.27 0.20] 3.60
0.20
1.27TYP [1.27 0.20]
0.38 -0.05
+0.10
3.86MAX
1.02 0.10
0.38 -0.05
+0.10
(R2.29)
(0.25)
6
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FKN08PN60 Rev. A
FKN08PN60 TRIAC (Silicon Bidirectional Thyristor) FKN08PN60 TRIAC (Silicon Bidirectional Thyristor)
TRADEMARKS
The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks.
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DISCLAIMER
FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN;NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. THESE SPECIFICATIONS DO NOT EXPAND THE TERMS OF FAIRCHILD'S WORLDWIDE TERMS AND CONDITIONS, SPECIFICALLY THE WARRANTY THEREIN, WHICH COVERS THESE PRODUCTS.
LIFE SUPPORT POLICY
FAIRCHILD'S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used herein: 1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body, or (b) support or sustain life, or (c) whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in significant injury to the user. 2. A critical component is any component of a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness.
PRODUCT STATUS DEFINITIONS Definition of Terms
Datasheet Identification
Advance Information
Product Status
Formative or In Design
Definition
This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design.
Preliminary
First Production
No Identification Needed
Full Production
Obsolete
Not In Production
This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only.
Rev. I20
7 FKN08PN60 Rev. A
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